High-Q thick-gate-oxide MOS varactors with subdesign-rule channel lengths for millimeter-wave applications

被引：21

作者：

Xu, Haifeng ^{[1
]}

Kenneth, K. O. ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 04期

关键词：

channel length; CMOS; millimeter wave; MOS varactor; quality factor; radio frequency (RF); thick oxide;

D O I：

10.1109/LED.2008.917629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thick-gate-oxide (TK) MOS structures with subdesign-rule (SDR) channel lengths located in n-wells are used as accumulation mode varactors to improve Q-factors to higher than 100 at 24 GHz, which is about five times that of conventional thin-gate-oxide (TN) MOS varactors. The varactor capacitance ratio (xi = C-max/C-min) is similar to 1.6. The structure was implemented using the United Microelectronics Company 130-nm logic CMOS technology. The varactors should be particularly useful in circuits for narrowband systems operating near 76 and 94 GHz. Use of TK MOS varactors also makes the C-V characteristics monotonic and mitigates the expected loss associated with the leakage current of TN layer at the 45-nm technology node and beyond.

引用

页码：363 / 365

页数：3

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