Magnetism and phase formation in the candidate dilute magnetic semiconductor system In2-xCrxO3:: Bulk materials are dilute paramagnets

被引：16

作者：

Bizo, L. ^{[1
]}

Allix, M. ^{[1
]}

Niu, H. ^{[1
]}

Rosseinsky, M. J. ^{[1
]}

机构：

[1] Univ Liverpool, Dept Chem, Liverpool L69 7ZD, Merseyside, England

来源：

ADVANCED FUNCTIONAL MATERIALS | 2008年 / 18卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/adfm.200700672

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Well-characterized bulk materials in the candidate dilute magnetic semiconductor system In2-xCrxO3 are prepared for 0 <= x <= 0.15, with cation site preferences in the bixbyite structure identified by diffraction methods. Small ferromagnetic moments are observed; their size (<10(-2) mu(B)/dopant ion) is not consistent with bulk ferromagnetism. The resulting bulk materials display dilute paramagnetic behaviour, with all of the moment expected per Cr3+ cation dopant being involved in this paramagnetic response.

引用

页码：777 / 784

页数：8

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