Enhancement of Gate-Bias and Current Stress Stability of P-Type SnO Thin-Film Transistors with SiNx/HfO2 Passivation Layers

被引：0

作者：

Hsu, Shu-Ming ^{[1
]}

Li, Yun-Shivan ^{[1
]}

Tu, Min-Sheng ^{[1
]}

He, Jyun-Ci ^{[1
]}

Chiu, I-Chung ^{[1
]}

Chen, Pin-Guang ^{[2
,3
]}

Lee, Min-Hung ^{[3
]}

Chen, Jian-Zhang ^{[4
]}

Cheng, I-Chun ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Mech Engn, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan

[3] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, 88,Sec 4,Ting Chou Rd, Taipei 11677, Taiwan

[4] Natl Taiwan Univ, Inst Appl Mech, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan

来源：

2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2016年

关键词：

ROOM-TEMPERATURE; DEPENDENCE; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V, respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V. Under the current stress of 2.5 mu A for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

引用

页码：153 / 156

页数：4

共 34 条

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