Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile

被引：23

作者：

Fan, Jiandong ^{[1
]}

Gueell, Frank ^{[1
]}

Fabrega, Cristian ^{[2
]}

Shavel, Alexey ^{[1
]}

Carrete, Alex ^{[2
]}

Andreu, Teresa ^{[2
]}

Ramon Morante, Joan ^{[1
,2
]}

Cabot, Andreu ^{[1
,2
]}

机构：

[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

[2] IREC, Catalonia Inst Energy Res, Barcelona 08930, Spain

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

关键词：

SOLAR-CELLS; PHOTOLUMINESCENCE; MORPHOLOGY; PARTICLES;

D O I：

10.1063/1.3673287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arrays of vertically aligned ZnO:Cl/ZnO core-shell nanowires were used to demonstrate that the control of the coaxial doping profile in homojunction nanostructures can improve their surface charge carrier transfer while conserving potentially excellent transport properties. It is experimentally shown that the presence of a ZnO shell enhances the photoelectrochemical properties of ZnO:Cl nanowires up to a factor 5. Likewise, the ZnO shell promotes the visible photoluminescence band in highly conducting ZnO:Cl nanowires. These lines of evidence are associated with the increase of the nanowires' surface depletion layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673287]

引用

页数：4

共 30 条

[1] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[2] Finite size effect in ZnO nanowires [J].

Chang, Pai-Chun ;

Chien, Chung-Jen ;

Stichtenoth, Daniel ;

Ronning, Carsten ;

Lu, Jia Grace .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[3] ZnO nanostructures for optoelectronics: Material properties and device applications [J].

Djurisic, A. B. ;

Ng, A. M. C. ;

Chen, X. Y. .

PROGRESS IN QUANTUM ELECTRONICS, 2010, 34 (04) :191-259

[4] Control of the doping concentration, morphology and optoelectronic properties of vertically aligned chlorine-doped ZnO nanowires [J].

Fan, Jiandong ;

Shavel, Alexey ;

Zamani, Reza ;

Fabrega, Cristian ;

Rousset, Jean ;

Haller, Servane ;

Gueell, Frank ;

Carrete, Alex ;

Andreu, Teresa ;

Arbiol, Jordi ;

Ramon Morante, Joan ;

Cabot, Andreu .

ACTA MATERIALIA, 2011, 59 (17) :6790-6800

[5] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[6]

Greene LE, 2007, J PHYS CHEM C, V111, P18451, DOI 10.1021/jp0775931

[7] Temperature dependent photoluminescence from ZnO nanowires and nanosheets on brass substrate [J].

Gu, Xiuquan ;

Huo, Kaifu ;

Qian, Guixiang ;

Fu, Jijiang ;

Chu, Paul K. .

APPLIED PHYSICS LETTERS, 2008, 93 (20)

[8] Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field [J].

Hall, C. R. ;

Dao, L. V. ;

Koike, K. ;

Sasa, S. ;

Tan, H. H. ;

Inoue, M. ;

Yano, M. ;

Jagadish, C. ;

Davis, J. A. .

APPLIED PHYSICS LETTERS, 2010, 96 (19)

[9] Characterizing the Ultrafast Charge Carrier Trapping Dynamics in Single ZnO Rods Using Two-Photon Emission Microscopy [J].

House, Ralph L. ;

Mehl, Brian P. ;

Kirschbrown, Justin R. ;

Barnes, Scott C. ;

Papanikolas, John M. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (21) :10806-10816

[10] ZnO-Al2O3 and ZnO-TiO2 core-shell nanowire dye-sensitized solar cells [J].

Law, Matt ;

Greene, Lori E. ;

Radenovic, Aleksandra ;

Kuykendall, Tevye ;

Liphardt, Jan ;

Yang, Peidong .

JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (45) :22652-22663

← 1 2 3 →