Electrical and optical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films prepared by chemical solution deposition -: art. no. 072903

被引：28

作者：

Liu, AY ^{[1
]}

Meng, XJ ^{[1
]}

Xue, JQ ^{[1
]}

Sun, JL ^{[1
]}

Chen, J ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1999859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

92%Pb(Mg1/3Nb2/3)O-3-8%PbTiO3 (PMNT) thin films have been prepared on Pt/Ti/SiO2/Si substrate with a LaNiO3 (LNO) buffer layer and on sapphire substrate by a chemical solution deposition method, respectively. X-ray diffraction analysis shows that the PMNT thin films on Pt/Ti/SiO2/Si substrate are polycrystalline with (110)-preferential orientation. Pt/PMNT/Pt capacitors have been fabricated and show a ferroelectric character with a spontaneous polarization (P-s) of 25.2 mu C/cm(2) and a remanent polarization (P-r) of 6.56 mu C/cm(2). The dielectric constant (epsilon(r)) and the dissipation factor (tan delta) at 1 kHz are 680 and 0.014, respectively. The band-gap energy of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV by the optical transmission spectra measurement. The optical constants (n, k) of the PMNT thin films in the wavelength range of 2.5-12.6 mu m were obtained by infrared spectroscopic ellipsometry measurement. (C) 2005 American Institute of Physics.

引用

页数：3

共 26 条

[1] Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition [J].