Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device

All-inorganic halide perovskites are considered as favorable materials for various electronic applications because of their superior functionality and stability. In this study, the inorganic rubidium lead-bromide (RbPbBr3) perovskite has been integrated as a resistive switching (RS) layer in the Al/RbPbBr3/indium tin oxide/polyethylene terephthalate flexible structure and exhibits both bipolar (memory) switching and threshold switching functions. The threshold switching appears for a low compliance current (CC), whereas the memory switching is initiated by setting a higher CC. The resistive memory switching operations along with multilevel programming, moderate endurance, and retention performance show the reproducible and reliable nonvolatile high-density memory feature. The robustness and mechanical flexibility are established by uniform current-voltage curves under various bending diameters and flexing cycles. Also, the first principle density functional theory calculations demonstrate the contribution of each element in the conduction band and valence band of RbPbBr3 with a direct band gap (2.24 eV). Finally, a mechanism in combination with the formation/annihilation of a metal filament and a Br- ion vacancy filament is proposed to explain the RS behavior.