Highly enhanced piezoelectric property of co-doped AlN

被引:61
作者
Iwazaki, Yoshiki [1 ]
Yokoyama, Tsuyoshi [1 ]
Nishihara, Tokihiro [1 ]
Ueda, Masanori [1 ]
机构
[1] Taiyo Yuden Co Ltd, Taito, Tokyo 1100005, Japan
关键词
THIN-FILMS;
D O I
10.7567/APEX.8.061501
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a series of new compositions of AlN-based piezoelectric material based on the results of first-principles calculation. The composition is expressed by (alpha(y),beta(1-y))(x)Al1-xN, where the elements alpha and beta are selected to maintain the charge neutrality of the host AlN. We found that the selection of Mg2+ for a and Hf4+ and Zr4+ for beta with y = 0.5 show good chemical stability with much better piezoelectric properties than pure AlN. Our results indicate broad compositional freedom for improving the piezoelectric properties of AlN by using the co-doping technique. (C) 2015 The Japan Society of Applied Physics
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页数:4
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