An ultraviolet photo-detector based on TiO2/water solid-liquid heterojunction

被引：87

作者：

Lee, Wen-Jen ^{[1
]}

Hon, Min-Hsiung ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Res Ctr Energy Technol & Strategy, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

关键词：

I-N PHOTODIODES; TIO2; FILMS; PHOTODETECTORS; GAN;

D O I：

10.1063/1.3671076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, an ultraviolet photodetector (UV-PD) based on TiO2/water solid-liquid heterojunction (SLHJ) is reported. The SLHJ UV-PD exhibits a high photosensitivity, excellent spectral selectivity, linear variations in photocurrent, and fast response. In addition, it is suggested that the spectral response can be tailored and that the performance can be improved through deliberate design of the active layer, electrolyte, and substrate of the SLHJ UV-PD. Moreover, we anticipate this work to be a starting point for more sophisticated commercial photon detection using an SLHJ device. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671076]

引用

收藏

页数：3

相关论文

共 22 条

[1] Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108 [J].

Alivov, YI ;

Özgür, Ü ;

Dogan, S ;

Johnstone, D ;

Avrutin, V ;

Onojima, N ;

Liu, C ;

Xie, J ;

Fan, Q ;

Morkoç, H .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

[2] Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity [J].

Biyikli, N ;

Kimukin, I ;

Aytur, O ;

Ozbay, E .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1718-1720

[3] SILICON-CARBIDE UV PHOTODIODES [J].

BROWN, DM ;

DOWNEY, ET ;

GHEZZO, M ;

KRETCHMER, JW ;

SAIA, RJ ;

LIU, YS ;

EDMOND, JA ;

GATI, G ;

PIMBLEY, JM ;

SCHNEIDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :325-333

[4] Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy [J].

Chang, Kuo-Hua ;

Sheu, Jinn-Kong ;

Lee, Ming-Lun ;

Tu, Shang-Ju ;

Yang, Chih-Ciao ;

Kuo, Huan-Shao ;

Yang, J. H. ;

Lai, Wei-Chih .

APPLIED PHYSICS LETTERS, 2010, 97 (01)

[5] Photoelectrochemical cells [J].

Grätzel, M .

NATURE, 2001, 414 (6861) :338-344

[6] GaN-based ultraviolet p-i-n photodiodes with buried p-layer structure grown by MOVPE [J].

Lee, M. L. ;

Sheu, J. K. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) :H182-H184

[7] Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio [J].

Lee, M. L. ;

Chi, Ping-Feng ;

Sheu, J. K. .

APPLIED PHYSICS LETTERS, 2009, 94 (01)

[8] Poly-Si TFTs with asymmetric dual-gate for kink current reduction [J].

Lee, MC ;

Han, MK .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (01) :25-27

[9] A Three-Dimensional Nanostructure Consisting of Hollow TiO2 Spheres Fabricated by Atomic Layer Deposition [J].

Lee, Wen-Jen ;

Hon, Min-Hsiung ;

Chung, Yi-Wen ;

Lee, Jian-Hong .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)

[10] Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition [J].

Lee, Wen-Jen ;

Hon, Min-Hsiung .

JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (15) :6917-6921