Multilevel data storage in multilayer phase change material

被引：35

作者：

Lu, Yegang ^{[1
]}

Wang, Miao ^{[1
]}

Song, Sannian ^{[2
]}

Xia, Mengjiao ^{[3
]}

Jia, Yu ^{[3
]}

Shen, Xiang ^{[1
]}

Wang, Guoxiang ^{[1
]}

Dai, Shixun ^{[1
]}

Song, Zhitang ^{[2
]}

机构：

[1] Ningbo Univ, Fac Elect Engn & Comp Sci, Key Lab Photoelect Mat & Devices Zhejiang Prov, Ningbo 315211, Zhejiang, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[3] Zhengzhou Univ, Sch Phys & Engn, Int Lab Quantum Funct Mat Henan, Zhengzhou 450001, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 17期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

SB-TE FILMS; CHANGE MEMORY; THIN-FILMS; GE2SB2TE5; TRANSITION; POWER;

D O I：

10.1063/1.4966182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superlattice-like GaSb/Sb4Te phase change film was proposed for multilevel phase change memory with the feature of three stable resistance states. Two distinct transition temperatures of around 170 and 230 degrees C were observed in the superlattice-like GaSb/Sb4Te thin film. Under elevated temperature, the precipitated rhombohedral Sb phase was found in the Sb4Te layer, which was followed by the crystallization of rhombohedral Sb2Te3, whereas the GaSb layer remained almost in the amorphous state except the impinged Sb grains. The formation of percolation path for crystallization in the GaSb layer can account for the multilevel resistance states. For the GaSb/Sb4Te-based device, the reversibly electrical switching was realized under the electrical pulse as short as 10 ns, and the endurance was achieved at least 10(5) cycles among different resistance states. Published by AIP Publishing.

引用

页数：5

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