Low-voltage driven carbon nanotube field emission lamp

被引：24

作者：

Bae, Na Young ^{[1
]}

Bae, Woo Mi ^{[1
]}

Ha, An Na ^{[1
]}

Nakamoto, Masayuki ^{[2
]}

Jang, Jin ^{[1
]}

Park, Kyu Chang ^{[1
]}

机构：

[1] Kyung Hee Univ, Display & Adv Display Res Ctr, Dept Informat, Seoul 130701, South Korea

[2] Shizuoka Univ, Elect Res Inst, Shizuoka, Japan

来源：

CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 04期

关键词：

Carbon nanotube; Field emission; MOSFET; Backlight; FABRICATION; EMITTERS; ARRAYS;

D O I：

10.1016/j.cap.2011.07.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h. (C) 2011 Published by Elsevier B.V.

引用

页码：S86 / S89

页数：4

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