Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

被引：115

作者：

Ohira, Shigeo ^{[1
,3
]}

Suzuki, Norihito ^{[1
]}

Arai, Naoki ^{[1
]}

Tanaka, Masahiko ^{[2
]}

Sugawara, Takamasa ^{[3
]}

Nakajima, Kazuo ^{[3
]}

Shishido, Toetsu ^{[3
]}

机构：

[1] Nippon Light Met Co Ltd, Shimizu Ku, Shizuoka 4213291, Japan

[2] Natl Inst Mat Sci, Sayo, Hyogo 6795198, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 17期

关键词：

beta-Ga2O3 single crystal; Sn-doping; annealing; electrical resistivity; optical transmittance;

D O I：

10.1016/j.tsf.2007.10.083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sn-doped beta-Ga2O3 single crystals with (100) plane were grown using the floating zone method, and the effect of the thermal annealing on the surface morphology, and electrical and optical properties was examined to compared with that before annealing. It was found that the surface morphology and roughness, electrical properties and optical transmittance did not change after annealing at 1100 degrees C in oxygen atmosphere, and the doped Sri was dispersed in beta-Ga2O3 matrix uniformly. However, the thermal annealing of Sn-doped beta-Ga2O3 causes the segregation of Sri atoms in the near-surface region, and the enhancement of the cathode luminescence (CL) intensity and the peak position toward longer wavelength. These results suggest that Sn-doped beta-Ga2O3 single crystal is thermally stable and is useful as substrate for the growth condition of GaN-based compounds. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：5763 / 5767

页数：5

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