Enlargement of grain in poly-Si by adding Au in Ni-mediated crystallization of amorphous Si using a SiNx cap layer

被引：1

作者：

Kim, KH

Oh, JH

Kim, EH

Jang, J ^{[1
]}

Kang, JY

Oh, KH

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[3] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期

关键词：

D O I：

10.1116/1.1924581

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the effect of An addition on Ni-mediated crystallization of amorphous silicon (a-Si) using a silicon-nitride (SiNx) cap layer. The Ni and An particles were sputtered on the SiNx,/a-Si and then the samples were heated for crystallization at a temperature of 550 degrees C. We achieved disk-shaped grains and found that the grain size increased with increasing An density when the Ni density was fixed at 2.45 X 10(14)/cm(2). We achieved a grain size of similar to 45 mu m, however the a-Si could not be crystallized when Au density is higher than Ni density. (c) 2005 American Vacuum Society.

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页码：605 / 608

页数：4

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