Intersubband electroluminescence using X-Γ carrier injection in a GaAs/AlAs double-quantum-well superlattice

被引：0

作者：

Domoto, C ^{[1
]}

Ohtani, N ^{[1
]}

Kuroyanagi, K ^{[1
]}

Vaccaro, PO ^{[1
]}

Nishimura, T ^{[1
]}

Takeuchi, H ^{[1
]}

Nakayama, M ^{[1
]}

机构：

[1] ATR, Adapt Commun Res Labs, Kyoto 6190288, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the intersubband electroluminescence (EL) from a GaAs/AlAs superlattice consisting of asymmetric double quantum wells. Interband-photoluminescence properties provide confirmation that electron population at the second Gamma (Gamma2) subband in the GaAs layer results from the carrier injection into the Gamma2 subband from the adjacent the lowest X (X1) subband in the AlAs layer, which is initiated by the X-T resonance. The energy of the EL, 190 meV, agrees with the energy spacing between the Gamma2 and the lowest F (Gamma1) subband in the GaAs layer.

引用

页码：729 / 730

页数：2

共 6 条

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