Measurement and simulation of filamentation in (Al,In)GaN laser diodes

被引：39

作者：

Scholz, Dominik ^{[1
]}

Braun, Harald ^{[1
]}

Schwarz, Ulrich T. ^{[1
]}

Brueninghoff, Stefanie ^{[2
]}

Queren, Desiree ^{[2
]}

Lell, Alfred ^{[2
]}

Strauss, Uwe ^{[2
]}

机构：

[1] Univ Regensburg, Nat Wissenschaftl Fak Phys 2, D-93053 Regensburg, Germany

[2] Osram Opto Semicond GmbH, D-93053 Regensburg, Germany

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1364/OE.16.006846

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

(Al,In)GaN-based laser diodes with ridge widths broader than a few micrometer tend to show filamentation effects in the lateral direction. By time-resolved scanning near-field optical microscopy, we find different kinds of filaments depending on ridge width and lateral position. We investigate these effects systematically and compare them to the results of corresponding simulations, which are based on a simple rate equation model including the lateral dimension. By this comparison we find a consistent and reasonable set of material parameters that can describe the laser diode. Furthermore, we discuss several reasons for filamentation dynamics like ridge asymmetry or spatial hole-burning, as well as critical temperatures that induce filamentation. (C) 2008 Optical Society of America.

引用

页码：6846 / 6859

页数：14

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