共 50 条
[41]
Full-chip manufacturing reliability check implementfor 90 nm and 65nm nodes using CPL™ and DDL™
[J].
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI,
2004, 5446
:402-413
[42]
Study of line edge roughness using continuous wavelet transform for 65 nm node
[J].
OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3,
2004, 5377
:1983-1991
[43]
Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond
[J].
OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3,
2008, 6924
[44]
Evaluation of Inverse Lithography Technology for 55nm-node memory device
[J].
OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3,
2008, 6924
[45]
Developing an integrated imaging system for the 70 nm node using high numerical aperture ArF lithography
[J].
DESIGN, PROCESS INTEGRATION, AND CHARACTERIZATION FOR MICROELECTRONICS,
2002, 4692
:274-287
[46]
Multiple focal plane exposure in 248nm lithography to improve the process latitude of 110nm contact
[J].
OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3,
2006, 6154
:U1296-U1304
[47]
Resolution enhancement techniques in 65 nm node nested-hole patterning
[J].
OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3,
2008, 6924
[48]
Assessment of 5-pole illumination for 65nm-node contact holes
[J].
OPTICAL MICROLITHOGRAPHY XVIII, PTS 1-3,
2005, 5754
:1405-1416
[49]
Phase metrology on 45-nm node phase-shift mask structures
[J].
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXII, PTS 1 AND 2,
2008, 6922 (1-2)
[50]
Assessment of a hypothetical roadmap that extends optical lithography through the 70nm technology node
[J].
LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING,
1999, 3741
:73-89