Organic spin valves with inelastic tunneling characteristics

被引:30
作者
Li, Kai-Shin [1 ]
Chang, Yin-Ming [1 ]
Agilan, Santhanam [1 ]
Hong, Jhen-Yong [1 ]
Tai, Jung-Chi [1 ]
Chiang, Wen-Chung [3 ]
Fukutani, Keisuke [4 ]
Dowben, P. A. [4 ]
Lin, Minn-Tsong [1 ,2 ]
机构
[1] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan
[2] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan
[3] Chinese Culture Univ, Dept Phys, Taipei 11114, Taiwan
[4] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Dept Phys & Astron, Lincoln, NE 68588 USA
来源
PHYSICAL REVIEW B | 2011年 / 83卷 / 17期
关键词
GIANT MAGNETORESISTANCE; JUNCTIONS; SEMICONDUCTOR; INTERFACE; CONDUCTANCE; INJECTION;
D O I
10.1103/PhysRevB.83.172404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrons may experience inelastic coupling with the organic spacer layer during tunneling between two ferromagnetic electrodes. To probe the transport behavior of spin-polarized electrons in organic materials, organic spin valves were fabricated utilizing a relatively thin organic barrier of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) dusted with alumina at the organic/ferromagnetic interfaces. These structures, with an organic barrier layer, exhibited magnetoresistance up to 12% at room temperature. In studies of the inelastic tunneling spectrum, the observed characteristic peak of the organic layer provides direct evidence of the interplay between the spin-polarized electrons and the organic molecules. Combining the inelastic tunneling results with a simple molecular vibration calculation yields further information on the configuration of the molecular thin film and the possible tunneling states of the spin-polarized electrons. Such interplay indicates a true transport of spin-polarized electrons through organic material rather than through defects or interdiffusion compounds formed at the interfaces within the organic spin valve.
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页数:4
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