A broadband 10-GHz track-and-hold in Si/SiGe HBT technology

被引：40

作者：

Jensen, JC ^{[1
]}

Larson, LE ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2001年 / 36卷 / 03期

关键词：

analog circuits; analog-digital conversion; BiCMOS analog integrated circuits; bipolar analog integrated circuits; broadband amplifiers; heterojunction bipolar transistors; high-speed integrated circuits; HF radio communication; sample and hold circuits; Schottky diode frequency converters; Schottky diodes;

D O I：

10.1109/4.910470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance multistage data converters and sub-sampling frequency downconverters typically require track and hold amplifiers (THAs) with high sampling rates and high linearity. This paper presents a THA for sub-sampling communications applications based on a diode bridge design with high-speed Schottky diodes and an improved current source approach for enhanced linearity, Implemented in a 45-GHz BiCMOS Si/SiGe process, this IC has an input bandwidth in excess of 10 GHz, consumes approximately 550 mW, and can accommodate input voltages up to 600 mV, With an input frequency of 8.05 GHz and a sampling frequency of 4 GHz,the THA has an IIP3 of 26 dBm and a spurious free dynamic range of 30 dB.

引用

页码：325 / 330

页数：6

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