Magnetic field induced donor exciton binding energy in a strained InAs/InP quantum wire

被引:11
作者
Arunachalam, N. [2 ]
Yoo, ChangKyoo [1 ]
Peter, A. John [3 ]
机构
[1] Kyung Hee Univ, Coll Engn, Dept Environm Sci & Engn, Ctr Environm Studies,Green Energy Ctr, Yongin 446701, Gyeonggi Do, South Korea
[2] Govt Hr Sec Sch, Dept Phys, Madurai 625109, Tamil Nadu, India
[3] Govt Arts & Sci Coll, Dept Phys, Madurai 625106, Tamil Nadu, India
关键词
Quantum wire; Exciton; NANOWIRES; DOTS;
D O I
10.1016/j.spmi.2010.10.005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Magneto-exciton bound donor is investigated in a strained InAs/InP quantum wire within the framework of single band effective mass approximation. The strain contribution to the potential is determined via deformation potential theory. The interband optical transition is computed with the various structural parameters in the influence of magnetic field. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:43 / 51
页数:9
相关论文
共 24 条
  • [11] Electron wave-function spillover in self-assembled InAs/InP quantum wires -: art. no. 155311
    Maes, J
    Hayne, M
    Sidor, Y
    Partoens, B
    Peeters, FM
    González, Y
    González, L
    Fuster, D
    García, JM
    Moshchalkov, VV
    [J]. PHYSICAL REVIEW B, 2004, 70 (15): : 155311 - 1
  • [12] Temperature and pressure dependence of the recombination processes in 1.5 μm InAs/InP (311)B quantum dot lasers
    Masse, N. F.
    Homeyer, E.
    Marko, I. P.
    Adams, A. R.
    Sweeney, S. J.
    Dehaese, O.
    Piron, R.
    Grillot, F.
    Loualiche, S.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [13] Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy
    Mohan, P
    Motohisa, J
    Fukui, T
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (13)
  • [14] Self assembled InAs/InP quantum dots for telecom applications in the 1.55μm wavelength range:: Wavelength tuning, stacking, polarization control, and lasing
    Noetzel, Richard
    Anantathanasarn, Sanguan
    van Veldhoven, Rene P. J.
    van Otten, Frank W. M.
    Eijkemans, Tom J.
    Trampert, Achim
    Satpati, Biswarup
    Barbarin, Yohan
    Bente, Erwin A. J. M.
    Oei, Yok-Siang
    de Vries, Tjibbe
    Geluk, Erik-Jan
    Smalbrugge, Barry
    Smit, Meint K.
    Wolter, Joachim H.
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (8B): : 6544 - 6549
  • [15] BAND-EDGE HYDROSTATIC DEFORMATION POTENTIALS IN III-V SEMICONDUCTORS
    NOLTE, DD
    WALUKIEWICZ, W
    HALLER, EE
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (04) : 501 - 504
  • [16] Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs
    Offermans, P
    Koenraad, PM
    Wolter, JH
    Pierz, K
    Roy, M
    Maksym, PA
    [J]. PHYSICAL REVIEW B, 2005, 72 (16)
  • [17] Pikus G.L. B. G. E., 1974, Symmetry and Strain-Induced Effects in Semiconductors
  • [18] Electronic states of ultrathin InAs/InP (001) quantum wells: A tight-binding study of the effects of band offset, strain, and intermixing
    Shtinkov, N
    Desjardins, P
    Masut, RA
    [J]. PHYSICAL REVIEW B, 2002, 66 (19) : 1 - 8
  • [19] Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots -: art. no. 035312
    Simon, J
    Pelekanos, NT
    Adelmann, C
    Martinez-Guerrero, E
    André, R
    Daudin, B
    Dang, LS
    Mariette, H
    [J]. PHYSICAL REVIEW B, 2003, 68 (03)
  • [20] Excitonic trions in single and double quantum dots -: art. no. 165331
    Szafran, B
    Stébé, B
    Adamowski, J
    Bednarek, S
    [J]. PHYSICAL REVIEW B, 2002, 66 (16) : 1 - 9