AlGaN/GaN heterostructure grown by metalorganic vapor phase epitaxy

被引：27

作者：

Qu, JQ ^{[1
]}

Li, J ^{[1
]}

Zhang, GY ^{[1
]}

机构：

[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 09期

基金：

中国国家自然科学基金;

关键词：

semiconductor; thin films; crystal growth; epitaxy;

D O I：

10.1016/S0038-1098(98)00253-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High quality AlGaN/GaN heterostructures have been grown by metalorganic vapor phase epitaxy (MOVPE). The crystal quality was investigated by X-ray diffraction and Rutherford Backscattering (RBS). Cracking was observed near the interface of the AlGaN and GaN epilayer when the thickness of AlGaN layer exceeds a critical value. Following Matthews' model, a calculation of the critical thickness was performed which agrees with the experiment. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：467 / 470

页数：4

相关论文

共 15 条

[1]

BINARI S, 1994, I PHYSICS C SERIES

[2] High transconductance heterostructure field-effect transistors based on AlGaN/GaN [J].

Chen, Q ;

Khan, MA ;

Yang, JW ;

Sun, CJ ;

Shur, MS ;

Park, H .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :794-796

[3] The influence of the deformation on the two-dimensional electron gas density in GaN-AlGaN heterostructures [J].

Gaska, R ;

Yang, JW ;

Bykhovski, AD ;

Shur, MS ;

Kaminski, VV ;

Soloviov, SM .

APPLIED PHYSICS LETTERS, 1998, 72 (01) :64-66

[4] SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY [J].

HACKE, P ;

DETCHPROHM, T ;

HIRAMATSU, K ;

SAWAKI, N .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2676-2678

[5] RELAXATION MECHANISM OF THERMAL-STRESSES IN THE HETEROSTRUCTURE OF GAN GROWN ON SAPPHIRE BY VAPOR-PHASE EPITAXY [J].

HIRAMATSU, K ;

DETCHPROHM, T ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04) :1528-1533

[6] PREPARATION OF ALXGA1-XN/GAN HETEROSTRUCTURE BY MOVPE [J].

ITO, K ;

HIRAMATSU, K ;

AMANO, H ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) :533-538

[7] STUDY OF CRACKING MECHANISM IN GAN/ALPHA-AL2O3 STRUCTURE [J].

ITOH, N ;

RHEE, JC ;

KAWABATA, T ;

KOIKE, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :1828-1837

[8]

KHAN MA, 1995, APPL PHYS LETT, V67, P1429

[9] OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS [J].

KHAN, MA ;

KUZNIA, JN ;

VANHOVE, JM ;

PAN, N ;

CARTER, J .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3027-3029

[10]

KHAN MA, 1994, I PHYSICS C SERIES