Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)-Vacuum Interface

被引：0

作者：

Bakin, V. V. ^{[1
]}

Kosolobov, S. N. ^{[1
]}

Rozhkov, S. A. ^{[1
,2
]}

Scheibler, H. E. ^{[1
,2
]}

Terekhov, A. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2018年 / 108卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

NEGATIVE ELECTRON-AFFINITY; P-GAN(0001) SURFACES; GAAS-CS; PHOTOELECTRONS; PHOTOCATHODE; ADSORPTION; STATES;

D O I：

10.1134/S0021364018150031

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spontaneous changes in photoemission properties of a ?-GaN(Cs)-vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Cs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the ?-GaN(Cs)-vacuum interface to its free energy and entropy.

引用

页码：180 / 184

页数：5

共 24 条

[1]

[Anonymous], 2017, MATER RES EXPRESS

[2] Nonlocal and local mechanisms of cesium-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface [J].

Bakin, V. V. ;

Toropetsky, K. V. ;

Scheibler, H. E. ;

Terekhov, A. S. .

JETP LETTERS, 2015, 101 (06) :380-384

[3] p-GaAs(Cs, O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer [J].

Bakin, V. V. ;

Toropetsky, K. V. ;

Scheibler, H. E. ;

Terekhov, A. S. ;

Jones, L. B. ;

Militsyn, B. L. ;

Noakes, T. C. Q. .

APPLIED PHYSICS LETTERS, 2015, 106 (18)

[4] ALKALI ADSORPTION ON GAAS(110) - ATOMIC-STRUCTURE, ELECTRONIC STATES AND SURFACE DIPOLES [J].

BECHSTEDT, F ;

SCHEFFLER, M .

SURFACE SCIENCE REPORTS, 1993, 18 (5-6) :145-198

[5]

Bell R., 1973, Negative electron affinity devices. Monographs in electrical and electronic engineering

[6]

Bonzel H. P., 2001, ADSORPTION SURFACES

[7] The degradation of quantum efficiency in negative electron affinity GaAs photocathodes under gas exposure [J].

Chanlek, N. ;

Herbert, J. D. ;

Jones, R. M. ;

Jones, L. B. ;

Middleman, K. J. ;

Militsyn, B. L. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (05)

[8] High temporal resolution coordinate-sensitive detector with gallium-arsenide photocathode [J].

Debur, V. G. ;

Beskin, G. M. ;

Karpov, S. V. ;

Plokhotnichenko, V. L. ;

Terekhov, A. S. ;

Kosolobov, S. S. ;

Shaibler, G. E. .

ASTROPHYSICAL BULLETIN, 2009, 64 (04) :386-391

[9] Negative electron affinity of cesiated p-GaN(0001) surfaces [J].

Eyckeler, M ;

Monch, W ;

Kampen, TU ;

Dimitrov, R ;

Ambacher, O ;

Stutzmann, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2224-2228

[10]

Galitsyn Yu. G., 1988, PRIB TEKH EKSP, V4, P191

← 1 2 3 →