Influence of indium on the electronic states in GalnNAs/GaAs quantum well structures

We use room-temperature photoreflectance spectroscopy to investigate the influence of indium on the electronic structure of Ga1-xInxNyAs1-y/GaAs multiple quantum wells. To fit our experimental data, a semiempirical theoretical model based on the band anticrossing Hamiltonian is successfully applied. Thus, we can extract some information about the Hamiltonian, in particular, the dependence of the coupling parameter C-NM on the In concentration in GaInNAs. CNM is shown to decrease with increasing indium mole fraction, confirming theoretical predictions. (C) 2003 American Institute of Physics.