Room temperature synthesis of Al:ZnO quantum dots

被引：0

作者：

Laksh, Muchhal ^{[1
]}

Richa, Krishna ^{[1
]}

Sinha, O. P. ^{[1
]}

机构：

[1] Amity Univ Uttar Pradesh, Amity Inst Nanotechnol, Noida, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

Quantum dots; Al doping; XPS; nano-particle size control; GROWTH;

D O I：

10.1007/978-3-319-03002-9_178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al Doped and undoped ZnO nanoparticles were synthesized at room temperature followed by quenching at relatively low temperature for size control. The XRD patterns of Al doped nanoparticles were similar to those of undoped nanoparticles, indicating the presence of Al ions at substitutional sites and that the AZO retained the crystal structure of ZnO. The presence of Al ions was confirmed by the XPS study. UV Visible spectroscopy reveals blue shift which in turn indicates an increase in the band gap.

引用

页码：693 / 694

页数：2

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