The coupling between quasilocalized states in semiconductor double quantum barriers

被引：5

作者：

Lee, EH ^{[1
]}

Stoltz, S ^{[1
]}

Chang, HC ^{[1
]}

Na, MH ^{[1
]}

Luo, H ^{[1
]}

Petrou, A ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 04期

关键词：

quantum wells; semiconductors; light absorption and reflection;

D O I：

10.1016/S0038-1098(98)00185-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interaction between above-barrier states quasilocalized in barrier layers was studied in a double quantum barrier configuration. Optical transmission experiments were performed on type-II CdSe/ZnTe samples, in which the valence band has a double-barrier structure. Numerical studies reveal a change of symmetry for the coupled quasilocalized states, as a function of the separation between the two barriers. Consequently, the strongest optical transition occurs between different pairs of states as the barrier separation changes. The behavior is illustrated by both experimental and numerical results. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：177 / 181

页数：5

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