Research on Crosstalk Issue of Through Silicon Via for 3D Integration

被引：0

作者：

Kang, Ting ^{[1
]}

Yan, Zhaowen ^{[1
]}

Zhang, Wei ^{[1
]}

Wang, Jianwei ^{[1
]}

机构：

[1] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China

来源：

2015 28TH IEEE INTERNATIONAL SYSTEM-ON-CHIP CONFERENCE (SOCC) | 2015年

关键词：

Electrical modeling of TSV; NEXT and FEXT crosstalk; Crosstalk suppression; 3D integration;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focused on the crosstalk analysis of through silicon via (TSV) for 3D integration. It started with the TSV electrical character. A GS TSV pair was established in HFSS and its electrical model was created in ADS. The S-parameter showed a good match between the two methods which validated the electrical model. Crosstalk analysis was an important part in this paper. First, the S-parameter of GSSG-BUMP-RDL model was simulated from 0.1GHz to 20GHz in HFSS, and the NEXT and FEXT crosstalk at 1GHz and 10GHz were given respectively in time domain. Then we added more ground TSV to the model to suppress the crosstalk. And it showed a better capacity to suppress the FEXT crosstalk. Finally, another improved model which used a ground plane to replace the ground RDL was carried out, and it resulted in a better performance to decrease the NEXT crosstalk.

引用

页码：396 / 400

页数：5

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