Linearization of Multi-Octave Power Amplifiers with Strong Memory Effectse

被引：0

作者：

Chen, Long ^{[1
]}

Chen, Wenhua ^{[1
]}

Chen, Xiaofan ^{[1
]}

Liu, Youjiang ^{[2
]}

Ghannouchi, Fadhel M. ^{[3
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Beijing, Peoples R China

[2] China Acad Engn Phys, Inst Elect Engn, Mianyang, Sichuan, Peoples R China

[3] Univ Calgary, Intelligent RF Radio Lab, Calgary, AB, Canada

来源：

2020 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO 2020) | 2020年

关键词：

Digital predistortion (DPD); memory effect; multi-octave; linearization; power amplifier (PA); WIDE-BAND;

D O I：

10.1109/NEMO49486.2020.9343491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multi-octave power amplifiers (PAs) with strong memory effects often cannot be well approximated with the existing digital predistortion (DPD) models due to the overlapping between the operating band and the envelope band. A novel envelope-modulated memory polynomial (EMMP) model is proposed in this letter to linearize such ultra wideband PAs. The envelope modulation on the supply rail is incorporated into the conventional memory polynomial (MP) model in order to enhance the modelling of memory effects. Experiments were performed on a 1 MHz-3100 MHz PA. The PA was driven at 600MHz and 2600-MHz carrier frequencies using a 16QAM 10-MHz bandwidth signal After the proposed DPD, the adjacent channel power ratio (ACPR) w as improved from -33 dBc to-49 dBc and the error vector magnitude (EVM) was improved by about 13 dB.

引用

页数：4

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