Enhancement of deep acceptor activation in semiconductors by superlattice doping

被引：130
作者：
Schubert, EF
Grieshaber, W
Goepfert, ID
机构：
[1] Center for Photonics Research, Dept. of Elec. and Comp. Engineering, Boston University, Boston
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期
关键词：
D O I：
10.1063/1.117206
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The thermal activation of accepters in wide-gap semiconductors can be very low due to large acceptor activation energies. It is shown that superlattice doping, i.e., the composition modulation of a uniformly doped ternary semiconductor, can enhance the acceptor activation by more than one order of magnitude. (C) 1996 American Institute of Physics.
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页码：3737 / 3739
页数：3
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