Evaluation of electrical properties of leaky BiFeO3 films in high electric field region by high-speed positive-up-negative-down measurement

被引:66
作者
Naganuma, Hiroshi [1 ]
Inoue, Yosuke [1 ]
Okamura, Soichiro [1 ]
机构
[1] Tokyo Univ Sci, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
关键词
Bismuth compounds - Iron compounds - Ferroelectric films;
D O I
10.1143/APEX.1.061601
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical properties of leaky ferroelectric BiFeO3 thin films were evaluated by using a high-speed positive-up-negative-down (PUND) measurement technique. The leakage current density was estimated from the gradient of the pulse response when a constant electric field was applied. The relative permittivity was estimated from an abrupt decrement when the applied field was removed. The twofold remanent polarization without the influence of the leakage current was estimated by subtracting the contribution of a paraelectric component from the abrupt increment in the pulse response when a positive pulse was applied. (C) 2008 The Japan Society of Applied Physics.
引用
收藏
页码:0616011 / 0616013
页数:3
相关论文
共 9 条
  • [1] Influence of Mn and Nb dopants on electric properties of chemical-solution-deposited BiFeO3 films
    Chung, Chin-Feng
    Lin, Jen-Po
    Wu, Jenn-Ming
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (24)
  • [2] Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition
    Kim, JK
    Kim, SS
    Kim, WJ
    Bhalla, AS
    Guo, R
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (13)
  • [3] NAGANUMA H, J MAT RES IN PRESS
  • [4] Structural, magnetic, and ferroelectric properties of multiferroic BiFeO3 film fabricated by chemical solution deposition
    Naganuma, Hiroshi
    Okamura, Soichiro
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)
  • [5] Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition
    Singh, S. K.
    Ishiwara, H.
    Maruyama, K.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (26)
  • [6] Ion modification for improvement of insulating and ferroelectric properties of BiFeO3 thin films fabricated by chemical solution deposition
    Uchida, H
    Ueno, R
    Nakaki, H
    Funakubo, H
    Koda, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L561 - L563
  • [7] Epitaxial BiFeO3 multiferroic thin film heterostructures
    Wang, J
    Neaton, JB
    Zheng, H
    Nagarajan, V
    Ogale, SB
    Liu, B
    Viehland, D
    Vaithyanathan, V
    Schlom, DG
    Waghmare, UV
    Spaldin, NA
    Rabe, KM
    Wuttig, M
    Ramesh, R
    [J]. SCIENCE, 2003, 299 (5613) : 1719 - 1722
  • [8] Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications -: art. no. 102903
    Yang, SY
    Zavaliche, F
    Mohaddes-Ardabili, L
    Vaithyanathan, V
    Schlom, DG
    Lee, YJ
    Chu, YH
    Cruz, MP
    Zhan, Q
    Zhao, T
    Ramesh, R
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (10)
  • [9] YUN Y, 2006, APPL PHYS LETT, V89