Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE

被引：19

作者：

Gelczuk, L. ^{[1
]}

Serafinczuk, J. ^{[1
]}

Darowska-Szata, M. ^{[1
]}

Dluzewski, P. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 12期

关键词：

high-resolution X-ray diffraction; line defects; stresses; metalorganic vapour-phase epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.03.003

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The relaxation process in InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy (MOVPE), has been investigated by means of high-resolution X-ray diffraction (HR-XRD). Transmission electron microscopy (TEM) revealed a two-dimensional (2D) network of 60 degrees misfit dislocations formed at the (0 0 1) interface in the two orthogonal < 110 > crystallographic directions. The structural analysis by X-ray diffractometry was performed with the samples oriented either in the [ 110] or the [110] perpendicular directions, using reciprocal lattice mapping. The observed anisotropic-strain relaxation, related to the asymmetry in the formation of a and beta misfit dislocations along [110] and [110] directions, respectively, causes distortion of the epilayer unit cell and lowers its symmetry to orthorhombic. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3014 / 3018

页数：5

共 17 条

[1] COMPOSITION AND LATTICE-MISMATCH MEASUREMENT OF THIN SEMICONDUCTOR LAYERS BY X-RAY-DIFFRACTION [J].

FEWSTER, PF ;

CURLING, CJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4154-4158

[2] INVESTIGATION OF THE ASYMMETRIC MISFIT DISLOCATION MORPHOLOGY IN EPITAXIAL LAYERS WITH THE ZINCBLENDE STRUCTURE [J].

FOX, BA ;

JESSER, WA .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2739-2746

[3] Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE [J].

Gelczuk, L. ;

Dabrowska-Szata, M. ;

Jozwiak, G. ;

Radziewicz, D. ;

Serafinczuk, J. ;

Dluewski, P. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8, 2007, 4 (08) :3037-+

[4] Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures [J].

Gelczuk, L. ;

Dabrowska-Szata, M. ;

Jozwiak, G. ;

Radziewicz, D. .

PHYSICA B-CONDENSED MATTER, 2007, 388 (1-2) :195-199

[5] Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers [J].

Goldman, RS ;

Kavanagh, KL ;

Wieder, HH ;

Ehrlich, SN ;

Feenstra, RM .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5137-5149

[6] DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS AT SEMICONDUCTOR HETEROINTERFACES [J].

GOORSKY, MS ;

MESHKINPOUR, M ;

STREIT, DC ;

BLOCK, TR .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) :A92-A96

[7]

HALLIWELL MAG, 1990, ADV XRAY ANAL, V33, P61

[8]

Hirth P. J., 1982, THEORY DISLOCATIONS

[9] Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors [J].

Jain, SC ;

Willander, M ;

Maes, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) :641-671

[10] Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films [J].

Pichaud, B ;

Burle, N ;

Putero-Vuaroqueaux, N ;

Curtill, C .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) :13255-13267

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