Structural, magnetic properties and photoemission study of Ni-doped ZnO

被引：127
作者：
Yin, ZG
Chen, NF
Yang, F
Song, SL
Chai, CL
Zhong, J
Qian, HJ
Ibrahim, K
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 100039, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2005年 / 135卷 / 07期
基金：
中国国家自然科学基金;
关键词：
diluted magnetic semiconductors; thin films; photoelectron spectroscopies;
D O I：
10.1016/j.ssc.2005.05.024
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Nickel-doped ZnO (Zn1-xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni hits it chemical valence of 2 +. According to the . We studied the electronic magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at similar to 2 eV below the Fermi energy E-F, which is of Ni 3d origin. No emission was found at E-A, suggesting the insulating nature of the film. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：430 / 433
页数：4
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