Piezoelectric effect in RF sputtered ferroelectric thin films

被引：7
|
作者：
Czekaj, D
Surowiak, Z
Bakirov, AA
Dudkievich, VP
机构：
[1] Univ Silesia, Dept Mat Sci, PL-41200 Sosnowiec, Poland
[2] Rostov Don State Univ, Fac Phys, SU-344104 Rostov Na Donu, Russia
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期
关键词：
films; perovskites; piezoelectric properties; RF sputtering; X-ray methods;
D O I：
10.1016/S0955-2219(01)00076-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Thin ferroelectric films of BaTiO3, LiNbO3, and Pb(Zr0.53Ti0.45W0.01Cd0.01)O-3 have been grown on different substrates. Processing conditions for the thin film preparation by RF sputtering were optimised to assure the composition transfer between the target and the thin film. Structure of the films was investigated by X-ray diffraction. The basic dielectric and piezoelectric properties were studied and the processing-structure perfection-property relationships of oxide thin films have been revealed. The piezoelectric charge coefficient d(33) was determined. Self-induced polarisation. of the thin films as well as stress-induced polarisation ascribed to reversible displacement of 90 degrees domain walls was taken into account to explain experimental results. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1609 / 1613
页数：5
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