Deep level transient spectroscopy studies of n-type ZnO single crystals grown by different techniques

被引：18
作者：
Scheffler, L. [1 ]
Kolkovsky, Vl [1 ]
Lavrov, E. V. [1 ]
Weber, J. [1 ]
机构：
[1] Tech Univ Dresden, D-01062 Dresden, Germany
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 33期
关键词：
ELECTRICAL CHARACTERIZATION; DEFECTS;
D O I：
10.1088/0953-8984/23/33/334208
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In the present study single-crystalline ZnO samples grown from the vapor phase, the melt, and a high-temperature aqueous solution (hydrothermal growth) are investigated before and after hydrogen plasma treatments, by means of deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. Dominant DLTS peaks are found to appear in the range of 120-350 K for all materials. The DLTS spectra depend on the procedure of growth of the ZnO. The thermal stabilities of the defects in an oxygen atmosphere and in an oxygen-lean atmosphere are analyzed. The origin of the DLTS peaks is discussed.
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页数：4
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