Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm

被引：11
作者：
Ben Nasr, A. [1 ]
Habchi, M. M. [1 ]
Bilel, C. [1 ]
Rebey, A. [1 ]
El Jani, B. [1 ]
机构：
[1] Univ Monastir, Fac Sci, Unite Rech Heteroepitaxies & Applicat, Monastir 5019, Tunisia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 05期
关键词：
QUANTUM-WELLS; BAND-GAP;
D O I：
10.1134/S1063782615050048
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Band structures of GaN0.58y As1-1.58y Bi (y) /GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L (W) and Bi composition y varying in the range of 4-10 nm and 0-0.07 respectively. The emissions 1.3 and 1.55 mu m were reached for specific couples (L (W) , y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 mu m.
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收藏
页码：593 / 599
页数：7
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