Growth of Bi12GeO20 and Bi12SiO20 crystals by the low-thermal gradient Czochralski technique

被引：9

作者：

Shlegel, V. N. ^{[1
]}

Pantsurkin, D. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Nikolaev Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia

来源：

CRYSTALLOGRAPHY REPORTS | 2011年 / 56卷 / 02期

关键词：

BISMUTH SILICON-OXIDE;

D O I：

10.1134/S1063774511010226

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Bi12SiO20 crystals have been grown for the first time by the low-thermal gradient Czochralski technique in the aOE (c) 111 > and aOE (c) 110 > directions. The conditions for reproducible crystal growth with a high-quality polyhedral faceted front are found. The systematic features of shaping Bi12SiO20 and Bi12GeO20 crystals, grown by the low-thermal gradient Czochralski technique, are compared. The defect formation in these crystals is studied and their optical homogeneity is analyzed by interferometry.

引用

页码：339 / 344

页数：6

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