Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection

被引：12

作者：

Wang, Guowei ^{[1
]}

Xu, Yingqiang ^{[1
]}

Wang, Lijuan ^{[1
]}

Ren, Zhengwei ^{[1
]}

He, Zhenhong ^{[1
]}

Xing, Junliang ^{[1
]}

Niu, Zhichuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 26期

基金：

中国国家自然科学基金;

关键词：

GROWTH;

D O I：

10.1088/0022-3727/45/26/265103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a complete fabrication process of InAs/GaSb type-II superlattice long-wavelength infrared photodiodes with band structure modelling, materials growth and device fabrication. The optoelectronic property of InAs/GaSb type-II superlattices is simulated by the modified empirical tight binding model for interface stoichiometry. We chose target superlattices from the simulation results. To obtain good lattice matched and high interface quality material, a two-step strain balance method of migration-enhanced epitaxy is applied in the growth of superlattices. The property of superlattices is matched well with the simulation results. Finally, photodiodes with 50% cutoff wavelength of 8.72 mu m and peak detectivity of 8.1 x 10(10) cm Hz(1/2) W-1 at 77 K are demonstrated.

引用

页数：7

共 24 条

[1]

Aifer EH, 2002, MATER RES SOC SYMP P, V722, P275

[2] Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes [J].

Chaghi, R. ;

Cervera, C. ;

Ait-Kaci, H. ;

Grech, P. ;

Rodriguez, J. B. ;

Christol, P. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (06)

[3] EFFECTS OF INTERFACE STOICHIOMETRY ON THE STRUCTURAL AND ELECTRONIC-PROPERTIES OF GA1-XINXSB/INAS SUPERLATTICES [J].

CHOW, DH ;

MILES, RH ;

HUNTER, AT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :888-891

[4] Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices [J].

Haugan, H. J. ;

Brown, G. J. ;

Grazulis, L. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (03)

[5] Growth of short-period InAs/GaSb superlattices [J].

Haugan, H. J. ;

Mahalingam, K. ;

Brown, G. J. ;

Mitchel, W. C. ;

Ullrich, B. ;

Grazulis, L. ;

Elhamri, S. ;

Wickett, J. C. ;

Stokes, D. W. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)

[6] Study of residual background carriers in midinfrared InAs/GaSb superlattices for uncooled detector operation [J].

Haugan, H. J. ;

Elhamri, S. ;

Szmulowicz, F. ;

Ullrich, B. ;

Brown, G. J. ;

Mitchel, W. C. .

APPLIED PHYSICS LETTERS, 2008, 92 (07)

[7] Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors [J].

Haugan, HJ ;

Szmulowicz, F ;

Brown, GJ ;

Ullrich, B ;

Munshi, SR ;

Grazulis, L ;

Mahalingam, K ;

Fenstermaker, ST .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2) :289-292

[8] Exploring optimum growth for high quality InAS/GaSb type-II superlattices [J].

Haugan, HJ ;

Grazulis, L ;

Brown, GJ ;

Mahalingam, K ;

Tomich, DH .

JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) :471-478

[9] Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation [J].

Kim, H. S. ;

Plis, E. ;

Gautam, N. ;

Myers, S. ;

Sharma, Y. ;

Dawson, L. R. ;

Krishna, S. .

APPLIED PHYSICS LETTERS, 2010, 97 (14)

[10] sp3s* tight-binding parameters for transport simulations in compound semiconductors [J].

Klimeck, G ;

Bowen, RC ;

Boykin, TB ;

Cwik, TA .

SUPERLATTICES AND MICROSTRUCTURES, 2000, 27 (5-6) :519-524

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