Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

被引：38

作者：

Zhan, Peng ^{[1
]}

Wang, Weipeng ^{[1
]}

Xie, Zheng ^{[1
]}

Li, Zhengcao ^{[1
]}

Zhang, Zhengjun ^{[1
]}

Zhang, Peng ^{[2
]}

Wang, Baoyi ^{[2
]}

Cao, Xingzhong ^{[2
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

PHOTOLUMINESCENCE; LUMINESCENCE; MAGNETISM; EMISSION; ORIGIN;

D O I：

10.1063/1.4737881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as similar to 0.55 mu(B)/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from similar to 0.44 emu/g (on quartz) to similar to 1.18 emu/g (on silicon) after annealing at 600 degrees C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737881]

引用

页数：4

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