Experimental and theoretical investigation of the pyroelectric effect of the p-n junction in a paraelectric non-polar semiconductor

被引：2

作者：

Butenko, A. V. ^{[2
]}

Sandomirsky, V. ^{[2
]}

Kahatabi, R. ^{[2
]}

Dashevsky, Z. ^{[3
]}

Kasiyan, V. ^{[3
]}

Zalevsky, Z. ^{[1
]}

Schlesinger, Y. ^{[2
]}

机构：

[1] Bar Ilan Univ, Sch Engn, IL-52900 Ramat Gan, Israel

[2] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

[3] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel

来源：

PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 03期

关键词：

Pyroelectric effect; Paraelectric semiconductor; p-n Junction; PIEZOELECTRICITY; PBTE;

D O I：

10.1016/j.physb.2011.11.012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High quality PbTe p-n junctions have been prepared specifically for this experiment. The pyroelectric effect was excited by a continuous CO2 laser beam, modulated by a mechanical chopper. The shape and amplitude of the periodic and single-pulse pyroelectric signals were studied as a function of temperature (10-130 K), reverse bias voltage (up to -500 mV) and chopping frequency (4-2000 Hz). The pyroelectric coefficient is approximate to 10(-3) mu C/cm(2)K in the temperature region 40-80 K. The developed theoretical model quantitatively describes all the experimental features of the observed pyroelectric effect. The time evolution of the temperature within the p-n junction was reconstructed. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：439 / 450

页数：12

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