Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices

被引：11
作者：
Meng, Yanlong [1 ]
Xie, Wenfa [1 ]
Zhang, Ning [1 ]
Chen, Shufen [1 ]
Li, Jiang [1 ]
Hu, Wei [1 ]
Zhao, Yi [1 ]
Hou, Jingying [1 ]
Liu, Shiyong [1 ]
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 05期
基金：
国家高技术研究发展计划(863计划);
关键词：
ITEOLEDS; MoOx; hole-injection;
D O I：
10.1016/j.mejo.2007.12.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Non-doped inverted top-emitting organic light-emitting diode with high efficiency is demonstrated through employing an effective hole-injection layer composed of MoOx. One reason for high efficiency lies on the energy-level matching between MoOx and hole-transport, and another is due to the Ohmic contact formed between MoOx and Ag. Both of them lead to an improvement of the hole-injection capability from Ag top anode. Moreover, the symmetrical current of "hole-only" device with MoOx shows better hole-injection capability, which is independent of the deposition sequence. The optimized device with MoOx hole-injection layer exhibits maximum current efficiency of 3.7 cd/A at a raised luminance level of 14,900 cd/m(2) and a maximum luminance of 47,000cd/m(2) under 18 V. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：723 / 726
页数：4
相关论文
共 22 条
[1]  
Bulovic V, 1997, APPL PHYS LETT, V70, P2954, DOI 10.1063/1.119260
[2]   Transparent light-emitting devices [J].
Bulovic, V ;
Gu, G ;
Burrows, PE ;
Forrest, SR ;
Thompson, ME .
NATURE, 1996, 380 (6569) :29-29
[3]   Top-emitting organic light-emitting devices using surface-modified Ag anode [J].
Chen, CW ;
Hsieh, PY ;
Chiang, HH ;
Lin, CL ;
Wu, HM ;
Wu, CC .
APPLIED PHYSICS LETTERS, 2003, 83 (25) :5127-5129
[4]   Influence of the hole injection layer on the luminescent performance of organic light-emitting diodes [J].
Chen, SF ;
Wang, CW .
APPLIED PHYSICS LETTERS, 2004, 85 (05) :765-767
[5]   Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer [J].
Choi, HW ;
Kim, SY ;
Kim, WK ;
Lee, JL .
APPLIED PHYSICS LETTERS, 2005, 87 (08)
[6]   High-performance organic thin-film transistors with metal oxide/metal bilayer electrode [J].
Chu, CW ;
Li, SH ;
Chen, CW ;
Shrotriya, V ;
Yang, Y .
APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3
[7]   Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodes [J].
Chu, Ta-Ya ;
Chen, Szu-Yi ;
Chen, Jenn-Fang ;
Chen, Chin H. .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6A) :4948-4950
[8]   Inverted hybrid organic light-emitting device with polyethylene dioxythiophene-polystyrene sulfonate as an anode buffer layer [J].
Dobbertin, T ;
Werner, O ;
Meyer, J ;
Kammoun, A ;
Schneider, D ;
Riedl, T ;
Becker, E ;
Johannes, HH ;
Kowalsky, W .
APPLIED PHYSICS LETTERS, 2003, 83 (24) :5071-5073
[9]   Inverted top-emitting organic light-emitting diodes using sputter-deposited anodes [J].
Dobbertin, T ;
Kroeger, M ;
Heithecker, D ;
Schneider, D ;
Metzdorf, D ;
Neuner, H ;
Becker, E ;
Johannes, HH ;
Kowalsky, W .
APPLIED PHYSICS LETTERS, 2003, 82 (02) :284-286
[10]   Mechanisms of injection enhancement in organic light-emitting diodes through an Al/LiF electrode [J].
Heil, H ;
Steiger, J ;
Karg, S ;
Gastel, M ;
Ortner, H ;
von Seggern, H ;
Stössel, M .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) :420-424
123