Proton irradiation of n-type GaAs

被引：6

作者：

Goodman, SA

Auret, FD

Ridgway, M

Myburg, G ^{[1
]}

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 2601, Australia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

关键词：

proton irradiation; deep level transient spectroscopy; GaAs; defects;

D O I：

10.1016/S0168-583X(98)00755-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper, we report on the defects introduced during 40 keV, 95 keV. 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Epl (Ei). Ep2 (E2). Ep3 (E3), Ep5. Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10(-13) cm(-2)) suggesting that it may be a physically large defect or a defect cluster. (C) 1999 Elsevier Science B.V. All rights reserved.

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收藏

页码：446 / 449

页数：4

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