Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown Capability

被引：7

作者：

Antoniou, Marina ^{[1
]}

Udrea, Florin ^{[1
]}

Bauer, Friedhelm ^{[2
]}

Mihaila, Andrei ^{[2
]}

Nistor, Iulian ^{[2
]}

机构：

[1] Univ Cambridge, Dept Elect Engn, Cambridge CB2 1PZ, England

[2] ABB Switzerland Ltd, Corporate Res, CH-5405 Baden, Switzerland

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 09期

关键词：

Insulated Gate Bipolar Transistor (IGBT); superjunction (SJ); termination;

D O I：

10.1109/LED.2011.2160930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The termination design of superjunction (SJ) structures has always been a conceptual and technological challenge. In this letter, we propose new, optimized, elegant, and cost-efficient solutions toward the realization of the first 1.2-kV rated SJ insulated-gate bipolar transistor. The design is based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The proposed design effectiveness is confirmed through extensive numerical simulations.

引用

页码：1275 / 1277

页数：3