Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown Capability

被引：7

作者：

Antoniou, Marina ^{[1
]}

Udrea, Florin ^{[1
]}

Bauer, Friedhelm ^{[2
]}

Mihaila, Andrei ^{[2
]}

Nistor, Iulian ^{[2
]}

机构：

[1] Univ Cambridge, Dept Elect Engn, Cambridge CB2 1PZ, England

[2] ABB Switzerland Ltd, Corporate Res, CH-5405 Baden, Switzerland

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 09期

关键词：

Insulated Gate Bipolar Transistor (IGBT); superjunction (SJ); termination;

D O I：

10.1109/LED.2011.2160930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The termination design of superjunction (SJ) structures has always been a conceptual and technological challenge. In this letter, we propose new, optimized, elegant, and cost-efficient solutions toward the realization of the first 1.2-kV rated SJ insulated-gate bipolar transistor. The design is based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The proposed design effectiveness is confirmed through extensive numerical simulations.

引用

页码：1275 / 1277

页数：3

共 50 条

[31] A SUPERJUNCTION INSULATED GATE BIPOLAR TRANSISTOR WITH BILATERAL HK INSULATORS: A SOLUTION TO CHARGE IMBALANCE
Wei, Hang
Jiang, Frank X. C.
Lin, Xinnan
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[32] The use of acoustic emission elastic waves as diagnosis method for insulated-gate bipolar transistor
Bejger, Artur
Kozak, Maciej
Gordon, Radoslaw
JOURNAL OF MARINE ENGINEERING AND TECHNOLOGY, 2020, 19 (04): : 186 - 196
[33] Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K
Ctro. Nac. Microelectronica [C., Campus UAB, 08193 Bellaterra, Barcelona, Spain
Microelectron. Reliab., 8 (1239-1246):
[34] THE COMPLEMENTARY INSULATED-GATE BIPOLAR-TRANSISTOR (CIGBT) - A NEW POWER SWITCHING DEVICE
BOISVERT, DM
PLUMMER, JD
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) : 368 - 370
[35] Design of optimum power insulated-gate bipolar transistor using response surface method
Wang, CL
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A): : 2864 - 2872
[36] An insulated-gate bipolar transistor model based on the finite-volume charge method
Zhang, Manhong
Wu, Wanchen
CHINESE PHYSICS B, 2022, 31 (12)
[37] Physics-based insulated-gate bipolar transistor model with input capacitance correction
Yang, Xin
Otsuki, Masahito
Palmer, Patrick R.
IET POWER ELECTRONICS, 2015, 8 (03) : 417 - 427
[38] A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor
Ramungul, N
Chow, TP
Ghezzo, M
Kretchmer, J
Hennessy, W
1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST, 1996, : 56 - 57
[39] Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines
Zhang, Xiao
Liu, Xun
Song, Yifan
Li, Xuehan
Huang, Wei
Zhou, Yang
Liu, Sheng
SENSORS, 2024, 24 (02)
[40] A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor
Jiang, Yixun
Kong, Qingfeng
Qiao, Ming
Guo, Yin
Tang, Yuxi
Liu, Xinxin
Zhang, Sen
Zhang, Bo
MICROELECTRONICS JOURNAL, 2024, 150

← 1 2 3 4 5 →