Properties of ultra-thin NbN films for membrane-type THz HEB

被引：10

作者：

Guillet, B. ^{[1
,2
]}

Arthursson, Oe. ^{[3
]}

Mechin, L. ^{[1
]}

Metzner, M. N. ^{[4
]}

Chauvat, M. P. ^{[4
]}

Ruterana, P. ^{[4
]}

Drakinskiy, V. ^{[3
]}

Cherednichenko, S. ^{[3
]}

Lefevre, R. ^{[2
]}

Delorme, Y. ^{[2
]}

Krieg, J. M. ^{[2
]}

机构：

[1] GREYC ENSICAEN, F-14050 Caen, France

[2] LERMA Obs Paris, F-75014 Paris, France

[3] Chalmers, S-41296 Gothenburg, Sweden

[4] SIFCOM ENSICAEN, F-14050 Caen, France

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2008年 / 151卷 / 1-2期

关键词：

NbN ultra-thin films; mixer devices;

D O I：

10.1007/s10909-007-9694-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various buffer layers have been investigated in order to improve the crystalline quality of NbN ultra-thin films. The structural properties, the thickness, the surface morphology of 5-10 nm NbN films have been studied by different techniques. Uncertainty on thickness measurements in this range and the relation between NbN film quality and gain bandwidth are discussed in the framework of their use in Hot Electron Bolometers (HEB).

引用

页码：570 / 574

页数：5

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