Concurrent dual-band Class-F load coupling network for applications at 1.7 and 2.14 GHz

被引:61
作者
Negra, Renato [1 ]
Sadeve, Alexandre [2 ]
Bensmida, Souheil [1 ]
Ghannouchi, Fadhel M. [1 ]
机构
[1] Univ Calgary, Schulich Sch Engn, Dept Elect & Comp Engn, iRadio Lab, Calgary, AB T2N 1N4, Canada
[2] Bordeaux Univ, IXL Microelect Lab, F-33405 Talence, France
关键词
Class F; cognitive radio; dual-band power amplifiers; GaAs MESFETs; high efficiency; microwave amplifiers;
D O I
10.1109/TCSII.2008.918993
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Highly efficient multiband power amplifiers (PAs) are key elements for the development of future multistandard multiband communication terminals and cognitive radios. This paper reports the design of a multiharmonic dual-band Class-F power amplifier for applications at wireless communication frequencies based on a switchless multiharmonic multiband load coupling network topology. The proposed output network topology is able to precisely synthesize Class-F impedance conditions with up to three harmonics at two distinct nonharmonic frequencies without the need of switches or electronically tunable elements. The proposed topology was used to design a Class-F PA in hybrid technology for the frequency bands at 1.7 and 2.14 GHz. Optimum impedances for maximum efficiency of the used GaAs MESFET for the two bands were determined by multiharmonic load-pull measurements and synthesized by the proposed switchless dual-band Class-F network. With a dual-band input matching network, the fabricated PA achieves 44.0% and 61.3% drain efficiency for an output power of more than 32.8 dbm and 34.4 dbm at 1.7 and 2.14 GHz, respectively. To the best knowledge of the authors, this is the first concurrent multiharmonic dual-band PA reported in open literature.
引用
收藏
页码:259 / 263
页数:5
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