An Effect of Irradiation with Trivalent Boron Ions on Pinning in Bi2Sr2CaCu2O8 Thin Films as Revealed by MWA and Hall-Probe Measurements

被引：0

作者：

Panarina, N. Yu. ^{[1
]}

Petukhov, V. Yu. ^{[1
]}

Talanov, Yu. I. ^{[1
]}

机构：

[1] Russian Acad Sci, Zavoisky Phys Tech Inst, Kazan 420029, Russia

来源：

APPLIED MAGNETIC RESONANCE | 2011年 / 40卷 / 03期

关键词：

HIGH-TEMPERATURE SUPERCONDUCTORS; SINGLE-CRYSTALS; IRREVERSIBILITY LINE; COLUMNAR DEFECTS; VORTEX MATTER; CREEP; PHASE;

D O I：

10.1007/s00723-011-0212-x

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Bi2Sr2CaCu2O8 thin films 200 nm thick were irradiated with 120 keV trivalent boron ions with the dose ranging from 10(11) to 10(14) ion/cm(2). The critical parameters of the samples prior and after irradiation were monitored by non-resonance modulated microwave absorption and Hall-probe techniques. For low doses of 10(11)-10(12) ion/cm(2), a slight increase in the critical current density and expansion of the area of the non-dissipative transport current flow were revealed. Such results are explained by the formation of separate areas of displaced atoms, which serve as effective pinning centers. The positive effects of irradiation faded away with dose increase of up to 10(13)-10(14) ion/cm(2). This is due to overlap of radiation-induced defects and weak pinning on them.

引用

页码：377 / 386

页数：10

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