An Analytical Solution to the Grain Boundary Barrier Height in Undoped Polysilicon Thin-Film Transistors

Based on U-shaped distribution of density of states (nOS) and discrete grain analysis for grain boundary (GB) traps, a physical-based explicit analytical solution to the GB potential barrier height (psi(B)) is developed for undoped polycrystalline silicon thin-film transistors (TFTs). The explicit solution is derived by using the Lambert W function, without additional approximations introduced. The validity and accuracy of the solution is demonstrated by comparing the model with both numerical calculations and experimental psi(B) data of polycrystalline Si TFTs.