Characterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar atmosphere on physical properties

被引:22
作者
Metin, H. [1 ]
Durmus, S. [2 ]
Erat, S. [1 ]
Ari, M. [2 ]
机构
[1] Mersin Univ, Dept Phys, TR-33343 Mersin, Turkey
[2] Erciyes Univ, Dept Phys, Kayseri, Turkey
关键词
ZnSe; SnO2; Optical properties; Electrical properties; ZNSE THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; GROWTH; MORPHOLOGY; SUBSTRATE;
D O I
10.1016/j.apsusc.2011.02.047
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been characterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap (E-g) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, d rho/dT>0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, linear region at low temperature. The temperature at which the transition takes place from exponential to linear region strongly depends on the annealing temperature. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:6474 / 6480
页数:7
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