High-speed SiGe HBT technology and applications to mm-wave circuits

被引：0
|
作者：
Meister, TF [1 ]
Knapp, H [1 ]
Schäfer, H [1 ]
Aufinger, K [1 ]
Stengl, R [1 ]
Boguth, S [1 ]
Schreiter, R [1 ]
Rest, M [1 ]
Perndl, W [1 ]
Wurzer, M [1 ]
Böttner, T [1 ]
Böck, J [1 ]
机构：
[1] Infineon Technol, D-81730 Munich, Germany
来源：
2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A SiGe bipolar technology for high frequency applications is presented. A transit frequency of 206 GHz, a maximum oscillation frequency of 200 GHz and a ring oscillator gate delay time of 3.9 ps have been obtained. With a 110 GHz dynamic frequency divider, a 86 GHz static frequency divider, a 52 GHz dual modulus 256/257 prescaler and a 98 GHz VCO state of the art high frequency circuits could be realized in this SiGe technology.
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页码：61 / 64
页数：4
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