Influence of postdeposition annealing on the properties of Ga2O3 films on SiO2 substrates

被引：36

作者：

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 702751, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2005年 / 389卷 / 1-2期

关键词：

thin films; chemical synthesis; X-ray diffraction; luminescence;

D O I：

10.1016/j.jallcom.2004.05.082

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the structural and optical properties of annealed gallium oxide (Ga2O3) film in the range of 750-1050degreesC, which had been grown on SiO2 substrates by the metal organic chemical vapor deposition (MOCVD) technique. We revealed that postdeposition annealing of amorphous Ga2O3 generated grains in beta-Ga2O3 phase. While photoluminescence spectra of as-deposited Ga2O3 films showed strong blue-green (BG) and ultraviolet (UV) emission, postdeposition annealing at high temperatures resulted in appearance of a longer wavelength UV band and a new green band. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：177 / 181

页数：5

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