Influence of electron irradiation and postannealing on photoluminescence of GaInNAs/GaAs quantum wells

被引：0

作者：

Pavelescu, EM ^{[1
]}

Gheorghiu, A ^{[1
]}

Baltateanu, N ^{[1
]}

Jouhti, T ^{[1
]}

Cimpoca, V ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33101, Finland

来源：

2004 International Semiconductor Conference, Vols 1and 2, Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the effects of 7-MeV electron irradiation (2x10(13) and 2x10(16) cm(-2) doses) and postannealing oil photoluminescence (PL) from 1.3-mu m GaInNAs/GaAs Multiple quantuni wells (QWs) grown by molecular-beam epitaxy. A small enhancement (27 %) in PL intensity is found for the lower dose whereas a noticeable deterioration in PL intensity is seen for the higher close. When annealed at 650 degrees C for 1 min the sample irradiated to the close of 2 x 10(13) cm(-2) underwent a similar enhancement and blue-shift in PL as the non-irradiated sample. In. contrast, a much strong PL is observed for the sample irradiated to the dose of 2 x 10(16) cm(-2) as compared to the non-irradiated sample. This irradiation-promoted enhancement in PL is accompanied by a small additional blue-shift as well as by small changes hi x-ray diffraction rocking curves, which indicate small changes ill quantum-well alloy composition or structure.

引用

页码：217 / 220

页数：4

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