A model for direct and inverse Hall-Petch relation for nanocrystalline ceramics

被引：26

作者：

Sheinerman, Alexander G. ^{[1
,2
,3
]}

Castro, Ricardo H. R. ^{[4
,5
]}

Gutkin, Mikhail Yu ^{[1
,3
,6
]}

机构：

[1] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia

[2] St Petersburg State Univ, 7-9 Univ Skaya Nab, St Petersburg 199034, Russia

[3] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

[4] Univ Calif Davis, Dept Mat Sci & Engn, One Shields Ave, Davis, CA 95616 USA

[5] Univ Calif Davis, NEAT ORU, One Shields Ave, Davis, CA 95616 USA

[6] ITMO Univ, St Petersburg 197101, Russia

来源：

MATERIALS LETTERS | 2020年 / 260卷

基金：

俄罗斯科学基金会;

关键词：

Ceramics; Hardness; Hall-Petch effect; Micromechanical modeling; GRAIN-SIZE; LIMIT;

D O I：

10.1016/j.matlet.2019.126886

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model describing both direct and inverse Hall-Petch dependences observed in nanocrystalline ceramic MgAl2O4 spinel is proposed. Within the model, plastic deformation in nanocrystalline ceramics (NCCs) is realized via lattice dislocation slip combined with thermally activated grain boundary (GB) sliding. The model strongly suggests that the controlling parameter determining the type (direct or inverse) of the Hall-Petch dependence is the GB sliding activation energy. It is assumed that this quantity can be affected by the temperature regime of NCC synthesis and therefore rationalize conflicting data reported in the literature concerning the onset of the inverse Hall-Petch behavior in this system. (C) 2019 Elsevier B.V. All rights reserved.

引用

页数：3

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