PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor

被引：26

作者：

Fainer, N. I. ^{[1
]}

Plekhanov, A. G. ^{[1
]}

Golubenko, A. N. ^{[2
]}

Rumyantsev, Yu M. ^{[1
]}

Rakhlin, V. I. ^{[3
]}

Maximovski, E. A. ^{[1
]}

Shayapov, V. R. ^{[1
]}

机构：

[1] Nikolaev Inst Inorgan Chem SB RAS, Novosibirsk, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Irkutsk Favorskii Inst Chem SB RAS, Irkutsk, Russia

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 01期

关键词：

CHEMICAL-VAPOR-DEPOSITION; MICROWAVE PLASMA CVD; LOW DIELECTRIC-CONSTANT; SICN FILMS; OPTICAL-PROPERTIES; TETRAMETHYLDISILAZANE PRECURSOR; MECHANICAL-PROPERTIES; SURFACE-MORPHOLOGY; PHASE-COMPOSITION; GROWTH-MECHANISM;

D O I：

10.1149/2.0201501jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deposition of thin SiCxNy layers from a new single-source organosilicon compound, methyltris(diethylamino)silane (MTDEAS) mixed with helium or nitrogen is studied by using thermodynamic simulation of Si-C-N-H(He)-O system and experimentally by low pressure (10(-2)-10 Torr) plasma enhanced chemical vapor decomposition (PECVD) in the temperature range of 300-1300 K. Thermodynamic simulation allowed to find the temperature boundaries of solid phase formation. The phase composition, as well as physicochemical and functional properties of the layers has been studied using a complex of modern experimental techniques, including Raman spectroscopy, scanning electron (SEM) and atomic force microscopy (AFM), X-ray diffraction using synchrotron radiation (XRD-SR), ellipsometry and spectrophotometry. The electrophysical parameters were measured using the C-V characteristics. The microhardness and Young's modulus were determined by Nanoindentation method. It was shown that the layers contain crystals of phases belonging to Si3-xCxN4 structures, such as alpha-Si3N4, alpha-Si2CN4, alpha-SiC2N4, and alpha-C3N4 which, possibly, are embedded in the amorphous matrix of silicon carbonitride layers. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：N3153 / N3163

页数：11

共 74 条

[1]

Anderson D.R., 1974, ANAL SILICONES, P264

[2] Structural characterization of amorphous SiCxNy chemical vapor deposited coatings [J].

Bendeddouche, A ;

Berjoan, R ;

Beche, E ;

MerleMejean, T ;

Schamm, S ;

Serin, V ;

Taillades, G ;

Pradel, A ;

Hillel, R .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6147-6154

[3] Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor:: Growth mechanism and structure of resulting Si:C:N films [J].

Blaszczyk-Lezak, I. ;

Wrobel, A. M. ;

Kivitorma, M. P. M. ;

Vayrynen, U. ;

Tracz, A. .

APPLIED SURFACE SCIENCE, 2007, 253 (17) :7211-7218

[4] Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Compositional and structural dependencies of film properties [J].

Blaszczyk-Lezak, I. ;

Wrobel, A. M. ;

Bielinski, D. M. .

[5] Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films [J].

Blaszczyk-Lezak, I ;

Wrobel, AM ;

Aoki, T ;

Nakanishi, Y ;

Kucinska, I ;

Tracz, A .

THIN SOLID FILMS, 2006, 497 (1-2) :24-34

[6] Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films [J].

Blaszczyk-Lezak, I ;

Wrobel, AM ;

Bielinski, DM .

THIN SOLID FILMS, 2006, 497 (1-2) :35-41

[7] Silicon carbonitride films produced by remote hydrogen microwave plasma CVD using a (dimethylamino)dimethylsilane precursor [J].

Blaszczyk-Lezak, I ;

Wrobel, AM ;

Kivitorma, MPM ;

Vayrynen, IJ .

CHEMICAL VAPOR DEPOSITION, 2005, 11 (01) :44-52

[8] a-SiCxNy thin films deposited by a microwave plasma assisted CVD process using a CH4/N2/Ar/HMDSN mixture: methane rate effect [J].

Bulou, S. ;

Le Brizoual, L. ;

Miska, P. ;

de Poucques, L. ;

Hugon, R. ;

Belmahi, M. .

INNOVATIONS IN THIN FILM PROCESSING AND CHARACTERISATION (ITFPC 2009), 2010, 12

[9] Interface chemistry and adhesion strength between porous SiOCH low-k film and SiCN layers [J].

Chang, Shou-Yi ;

Chang, Jien-Yi ;

Lin, Su-Jien ;

Tsai, Hung-Chun ;

Chang, Yee-Shyi .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (02) :G39-G43

[10] The affinity of Si-N and Si-C bonding in amorphous silicon carbon nitride (a-SiCN) thin film [J].

Chen, CW ;

Huang, CC ;

Lin, YY ;

Chen, LC ;

Chen, KH .

← 1 2 3 4 5 6 7 8 →